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Band alignment of Al2O3 with (-201) β-Ga2O3
Band alignment of Al2O3 with (-201) β-Ga2O3

Structural, electronic structure, and band alignment properties at  epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray  techniques: Journal of Applied Physics: Vol 119, No 16
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16

CoMoW/Al2O3-MgO-Li2O Catalytic formulations for DBT hydrodesulphurization
CoMoW/Al2O3-MgO-Li2O Catalytic formulations for DBT hydrodesulphurization

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O  Heterojunction Studied by X-ray Photoelectron Spectroscopy
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor  Diodes via Defect Engineering of Insulator | Scientific Reports
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports

Band gap structure modification of amorphous anodic Al oxide film by  Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... |  Download Scientific Diagram
Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... | Download Scientific Diagram

Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si  gate stacks grown by atomic layer deposition - ScienceDirect
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition - ScienceDirect

Band gap structure modification of amorphous anodic Al oxide film by  Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle  Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot

BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a  variety of classic ALD high-k´s via REELS
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS

Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download  Scientific Diagram
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram

Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap  type through density functional theory computations - ScienceDirect
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect

Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with...  | Download Scientific Diagram
Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with... | Download Scientific Diagram

Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces
Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces

JSTS - Journal of Semiconductor Technology and Science
JSTS - Journal of Semiconductor Technology and Science


Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap  type through density functional theory computations - ScienceDirect
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect

a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... |  Download Scientific Diagram
a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... | Download Scientific Diagram

Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN  interfaces: A first-principles study - ScienceDirect
Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study - ScienceDirect

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetries | The Journal  of Physical Chemistry C
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C

Band offset determination for amorphous Al2O3 deposited on bulk AlN and  atomic-layer epitaxial AlN on sapphire
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3  and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x =  0.25–0.74
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

Band Offset and Electron Affinity of Monolayer MoSe2 by Internal  Photoemission
Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O  Heterojunction Studied by X-ray Photoelectron Spectroscopy
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond  metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14

Interface characterization of atomic layer deposited Al2O3 on m-plane GaN
Interface characterization of atomic layer deposited Al2O3 on m-plane GaN