Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports
Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... | Download Scientific Diagram
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition - ScienceDirect
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with... | Download Scientific Diagram
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*" title="Energy-band alignment of atomic layer deposited (HfO2) x(Al2O3)1 − x gate dielectrics on 4H-SiC* " />
Energy-band alignment of atomic layer deposited (HfO2) x(Al2O3)1 − x gate dielectrics on 4H-SiC