Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Zbrojnice Racionalizace nepříjemný dámské jenové šortky Osvětlit Vraťte se Hlasování
Band gap narrowing in n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si: Journal of Applied Physics: Vol 86, No 8
Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing)
Band gap narrowing and radiative efficiency of silicon doped GaN
Band gap of C3N4 in the GW approximation - ScienceDirect
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Zbrojnice Racionalizace nepříjemný dámské jenové šortky Osvětlit Vraťte se Hlasování
Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap narrowing and radiative efficiency of silicon doped GaN
Fluorinated h-BN as a magnetic semiconductor | Science Advances
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
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Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
