Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition - ScienceDirect
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
*" title="Energy-band alignment of atomic layer deposited (HfO2) x(Al2O3)1 − x gate dielectrics on 4H-SiC* ">
*" title="Energy-band alignment of atomic layer deposited (HfO2) x(Al2O3)1 − x gate dielectrics on 4H-SiC* " />
Energy-band alignment of atomic layer deposited (HfO2) x(Al2O3)1 − x gate dielectrics on 4H-SiC